MOSFETs | FDMS7670

N 沟道，PowerTrench® MOSFET，30V，3.8mΩ

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概览

此 N 沟道 MOSFET 专为提高 DC/DC 转换器的总能效以及最大程度降低其开关节点噪声而设计，可以使用同步开关 PWM 控制器，也可以使用传统开关 PWM 控制器。它经过了优化，可实现低门极电荷、低 RDS(ON)、快速开关和体二极管逆向恢复功能。

  • This product is general usage and suitable for many different applications.
  • VGS = 10 V，ID = 21 A时，最大rDS(on) = 3.8 mΩ
  • VGS = 4.5 V，ID = 17 A时，最大rDS(on) = 5.0 mΩ
  • 先进的封装和硅设计，实现了低rDS(on)和高效率
  • 下一代先进体二极管技术，专为软恢复设计      在同步降压转换器应用中以最低的EMI提供类似于肖特基二极管的性能。
  • MSL1耐用封装设计
  • 100%经过UIL测试
  • 符合RoHS标准

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMS7670

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Active

CAD Model

Pb

A

H

P

PQFN-8

483AE

1

260

REEL

3000

N

30

3.8

N-Channel

Single

20

3

21

62

-

45

14

17

3085

$0.46

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