Low/Medium Voltage MOSFETs | FDMS8090

100V 对称双 N 沟道 PowerTrench® MOSFET 40A，13mΩ

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概览

此器件采用双 Power 56 (5 mm X 6 mm MLP) 封装，其中包含两个快速开关（Qgd 最小）100V N 沟道 MOSFET。该封装经过增强，具有出色的热性能。

  • DC-DC商用电源

  • 最大值 rDS(on) = 13 mΩ（VGS = 10 V, ID = 10 A 时）
  • 最在值 rDS(on) = 20 mΩ（VGS = 6 V, ID = 8 A
    ）
  • 低电感封装缩短了上升/下降时间，从而减少了开关损耗
  • MOSFET集成可实现降低电路电感以及开关节点振铃噪声的优化布局
  • 100%经过UIL测试
  • 符合RoHS标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMS8090

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CAD Model

Pb

A

H

P

WDFN-8

511DC

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

Power 56 (SO-8FL)

Low-Medium Voltage

Standard

0

Single

0

100

Q1: 13.0, Q2: 13.0

±20

4

10

59

-

-

-

10

1285

4.1

54

301

16

$2.7054

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可靠性数据

Die Related Summary Data

Device: FDMS8090

Equivalent to wafer fab process: T7

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

T7

11

3294609671

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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