N 沟道双 CoolTM 56 Power Trench® MOSFET 40V,192A,1.1mΩ

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概览

此 N 沟道 MOSFET 采用先进的 PowerTrench® 工艺生产。同时结合了硅和 Dual Cool™ 封装技术的发展进步,可提供最低的 rDS(on),同时利用极低的结到环境热阻保持出色的开关性能。

  • 发电和配电

  • rDS(on)最大值 = 1.1 mΩ,需 VGS = 10 V、ID = 44 A
  • rDS(on)最大值 = 1.5 mΩ,需 VGS = 4.5 V、ID = 37 A
  • 先进的封装技术和硅技术相结合,实现了低 rDS(on) 和高效率
  • 下一代增强型体二极管技术,专为软恢复设计
  • MSL1 耐用封装设计
  • 100%经过UIL测试
  • 符合 RoHS 标准

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMS8320LDC

Active

CAD Model

Pb

A

H

P

DFN-8

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

Power 56 Dual Cool

Low-Medium Voltage

Logic

0

Single

0

40

1.1

±20

3

192

125

-

1.5

-

57

8310

16

89

2255

132

$0.9341

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