MOSFETs | FDMS86152

N 沟道，PowerTrench® MOSFET，100V，45A，6mΩ

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CAD Model

CAD模型

概览

此 N 沟道 MOSFET 使用先进的 PowerTrench® 工艺生产，特别适用于最大程度降低导通电阻，同时保持卓越的开关性能。

  • DC-DC商用电源
  • 最大值 rDS(on) = 6 mΩ（VGS = 10 V, ID = 14 A 时）
  • 最大值 rDS(on) = 11 mΩ（VGS = 6 V, ID = 11.5 A 时）
  • 先进的封装技术和硅技术相结合，实现了低rDS(on)和高效率
  • MSL1耐用封装设计
  • 100%经过UIL测试
  • 符合 RoHS 标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMS86152

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Active

CAD Model

Pb

A

H

P

PQFN-8

483AG

1

260

REEL

3000

Y

100

6

N-Channel

Single

±20

4

45

125

-

-

-

23

2530

$2.1023

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