FDMS86182

N 沟道屏蔽门极 PowerTrench® MOSFET 100V，78A，7.2mΩ

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CAD模型

概览

此 N 沟道 MV MOSFET 是使用先进的 PowerTrench® 工艺生产的，该工艺结合了屏蔽门极技术。此工艺经过了优化，可最大程度降低导通电阻，同时使用业内最佳的软体二极管来保持出色的开关性能。

应用

This product is general usage and suitable for many different applications.

特性

Shielded Gate MOSFET Technology
Max r_DS(on) = 7.2 mΩ at V_GS = 10 V, I_D = 28 A
Max r_DS(on) = 19.5 mΩ at V_GS = 6 V, I_D = 14 A
50% Lower Q_rr than Other MOSFET Suppliers
Lowers Switching Noise/EMI
MSL1 Robust Package Design
100% UIL Tested
RoHS Compliant

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDMS86182

Active

PQFN-8

483AE

260

REEL

3000

100

7.2

N-Channel

Single

±20

1880

$0.7607

产品型号:

分销代理商		Stock	BUY

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MOSFETs | FDMS86182

N 沟道屏蔽门极 PowerTrench® MOSFET 100V，78A，7.2mΩ

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