Low/Medium Voltage MOSFETs | FDMS86202

N 沟道，屏蔽门极，PowerTrench® MOSFET，120V，64A，7.2mΩ

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概览

此 N 沟道 MOSFET 是使用先进的 PowerTrench®工艺生产的，该工艺结合了屏蔽门极技术。此工艺经过了优化，可最大程度降低导通电阻，同时可保持卓越的开关性能。

  • This product is general usage and suitable for many different applications.
  • 屏蔽栅极 MOSFET 技术
  • 最大 rDS(on)= 7.2 mΩ（VGS = 10 V、ID= 13.5 A
    ）
  • 最大 rDS(on)= 10.3 mΩ（VGS = 6 V、ID= 11.5 A
    ）
  • 先进的封装技术和硅技术相结合，实现低 rDS(on)和高效率
  • MSL1 耐用封装设计
  • 100% 经过 UIL 测试
  • 符合 RoHS 标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMS86202

Contact Sales

Active

CAD Model

Pb

A

H

P

PQFN-8

483AG

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

Power 56 (SO-8FL)

Low-Medium Voltage

Standard

0

Single

0

120

7.2

±20

4

64

156

-

-

-

29

3195

8.7

117

449

17

$1.7663

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