Low/Medium Voltage MOSFETs | FDMS86202ET120

N 沟道，屏蔽门极，PowerTrench® MOSFET，120V，102A，7.2mΩ

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概览

此 N 沟道 MOSFET 是使用先进的 PowerTrench® 工艺生产的，该工艺结合了屏蔽门极技术。此工艺经过了优化，可最大程度降低导通电阻，同时可保持卓越的开关性能。

  • This product is general usage and suitable for many different applications.

  • 扩展额定 TJ 至 175°C
  • 屏蔽栅极 MOSFET 技术
  • 最大值 rDS(on)= 7.2 mΩ（VGS = 10 V, ID= 13.5 A
    时）
  • 最大值 rDS(on)= 10.3 mΩ（VGS = 6 V, ID= 11.5 A
    时）
  • 低 rDS(on) 和高效的先进硅封装
  • MSL1 耐用封装设计
  • 100% 经过 UIL 测试
  • 符合 RoHS 标准
    "

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMS86202ET120

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CAD Model

Pb

A

H

P

PQFN-8

483AG

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

Power 56 (SO-8FL)

Low-Medium Voltage

Standard

0

Single

0

120

7.2

±20

4

102

187

-

-

-

29

3275

9.5

140

460

17

$2.6072

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可靠性数据

Die Related Summary Data

Device: FDMS86202ET120

Equivalent to wafer fab process: T7

产品技术

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

T7

11

3294609671

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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