FDMS86250

N 沟道，Power Trench® MOSFET，150V，30A，25mΩ

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CAD模型

概览

此 N 沟道 MOSFET 是使用先进的 PowerTrench® 工艺生产的，特别适用于最大程度降低导通电阻，同时保持卓越的开关性能。

应用

DC-DC商用电源

特性

Shielded Gate MOSFET Technology
Max r_DS(on) = 25 mΩ at V_GS = 10 V, I_D = 6.7 A
Max r_DS(on) = 33 mΩ at V_GS = 6 V, I_D = 5.8 A
Advanced package and silicon combinatory for low r_DS(on) and high efficiency
MSL1 robust package design
100% UIL tested
RoHS Compliant

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDMS86250

Active

PQFN-8

483AE

260

REEL

3000

150

N-Channel

Single

±20

1750

$0.9856

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MOSFETs | FDMS86250

N 沟道，Power Trench® MOSFET，150V，30A，25mΩ

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