Low/Medium Voltage MOSFETs | FDMS86252

N 沟道屏蔽门极 PowerTrench® MOSFET 150V，16A，51mΩ

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概览

此 N 沟道 MOSFET 是使用先进的 PowerTrench® 工艺生产的，该工艺结合了屏蔽门极技术。此工艺经过了优化，可最大程度降低导通电阻，同时可保持出色的开关性能。

  • This product is general usage and suitable for many different applications.

  • Shielded Gate MOSFET Technology
  • VGS = 10 V，ID = 4.6 A时，最大rDS(on) = 51 mΩ
  • VGS = 6 V，ID = 3.9 A时，最大rDS(on) = 70 mΩ
  • 先进的封装和硅技术完美融合，实现了低rDS(on)和高效率
  • MSL1耐用封装设计
  • 100%经过UIL测试
  • 符合RoHS标准

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMS86252

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CAD Model

Pb

A

H

P

PQFN-8

483AE

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

Power 56 (SO-8FL)

Low-Medium Voltage

Standard

0

Single

0

150

51

±20

4

16

69

-

-

-

6.1

678

2.4

61

74

4.3

$0.8729

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可靠性数据

Die Related Summary Data

Device: FDMS86252

Equivalent to wafer fab process: T7

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

T7

11

3294609671

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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