MOSFETs | FDMS86310

N 沟道，PowerTrench® MOSFET，80V，50A，4.8mΩ

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CAD模型

概览

此 N 沟道 MOSFET 专用于提高 DC/DC 转换器的总能效以及最大程度降低其开关节点噪声，可以使用同步开关 PWM 控制器，也可以使用传统开关 PWM 控制器。它经过了优化，可实现低门极电荷、低 RDS(ON)、快速开关和体二极管逆向恢复功能。

  • DC-DC商用电源
  • VGS = 10V，ID = 17A时，最大rDS(on) = 4.8mΩ
  • VGS = 8 V，ID = 14 A时，最大rDS(on) = 6.7mΩ
  • 先进的封装技术和硅技术相结合，实现了低rDS(on)和高效率
  • 新一代的增强型体二极管技术，专为软恢复而设计
  • MSL1耐用封装设计
  • 100%经过UIL测试
  • 符合RoHS标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMS86310

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Active

CAD Model

Pb

A

H

P

PQFN-8

483AE

1

260

REEL

3000

Y

80

4.8

N-Channel

Single

±20

4.5

50

96

-

-

-

55

4730

$0.9718

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