N 沟道,Power Trench® MOSFET,60V,158A,2.5mΩ

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概览

此 N 沟道 MOSFET 专为提高 DC/DC 转换器的总效率以及最大程度降低其开关节点噪声而设计,可以使用同步开关 PWM 控制器,也可以使用传统开关 PWM 控制器。它经过了优化,可实现低门极电荷、低 RDS(ON)、快速开关和体二极管反向恢复功能。

  • DC-DC商用电源
  • Primary Switch in Isolated DC-DC
  • Synchronous Rectifier
  • Load Switch
  • Max rDS(on) = 2.5 mΩ at VGS = 10 V, ID = 25 A
  • Max rDS(on) = 3.7 mΩ at VGS = 4.5 V, ID = 20 A
  • advanced Package and Silicon combination for low rDS(on) and high efficiency
  • Next generation enhanced body diode technology, engineered for soft recovery
  • MSL1 robust package design
  • 100% UIL tested
  • RoHS Compliant

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMS86500L

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Active

CAD Model

Pb

A

H

P

PQFN-8

1

260

REEL

3000

Y

60

2.5

N-Channel

Single

±20

3

158

104

-

3.7

-

54

9420

$1.0157

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