N 沟道,PowerTrench® MOSFET,60V,42A,7.4mΩ

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概览

此 N 沟道 MOSFET 专用于提高 DC/DC 转换器的总能效以及最大程度降低其开关节点噪声,可以使用同步开关 PWM 控制器,也可以使用传统开关 PWM 控制器。它经过了优化,可实现低门极电荷、低 RDS(ON)、快速开关和体二极管逆向恢复功能。

  • AC-DC商用电源
  • Primary DC-DC Switch
  • Motor Bridge Switch
  • Synchronous Rectifier

  • Max rDS(on) = 7.4 mΩ at VGS = 10 V, ID = 14 A
  • Max rDS(on) = 10.3 mΩ at VGS = 8 V, ID = 12.5 A
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency
  • Next generation enhanced body diode technology, engineered for soft recovery
  • MSL1 robust package design
  • 100% UIL tested
  • RoHS Compliant

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMS86520

Active

CAD Model

Pb

A

H

P

PQFN-8

1

260

REEL

3000

Y

N-Channel

PowerTrench® T6

Power 56 (SO-8FL)

Low-Medium Voltage

Standard

0

Single

0

60

7.4

±20

4.5

42

69

-

-

-

23

9420

5.6

40

624

24

$0.5868

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