Low/Medium Voltage MOSFETs | FDMS86520L

N 沟道，PowerTrench® MOSFET，60V，22A，8.2mΩ

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概览

此 N 沟道 MOSFET 专为提高 DC/DC 转换器的总能效以及最大程度降低其开关节点噪声而设计，可以使用同步开关 PWM 控制器，也可以使用传统开关 PWM 控制器。它经过了优化，可实现低门极电荷、低 RDS(ON)、快速开关和体二极管逆向恢复功能。

  • DC-DC商用电源
  • Primary Switch in insolated DC-DC
  • Synchronous Rectifier
  • Load Switch

  • VGS = 2 V且ID = 13.5 A时，最大rDS(on) = 8.2 mΩ
  • VGS = 4.5 V且ID = 11.5 A时，最大rDS(on) = 11.7 mΩ
  • 先进的封装和硅技术完美融合，实现了低rDS(on)和高效率
  • MSL1耐用封装设计
  • 100%经过UIL测试
  • 符合RoHS标准

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMS86520L

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CAD Model

Pb

A

H

P

PQFN-8

483AE

1

260

REEL

3000

Y

N-Channel

PowerTrench® T6

Power 56 (SO-8FL)

Low-Medium Voltage

Logic

0

Single

0

60

8.2

±20

3

22

69

-

11.7

-

21

3470

4.7

37

625

25

$0.7728

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可靠性数据

Die Related Summary Data

Device: FDMS86520L

Equivalent to wafer fab process: T9

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

T9

0

1733101746

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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