N 沟道,PowerTrench® MOSFET,60V,245A,1.65mΩ

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安森美半导体先进的 PowerTrench® 工艺特别适用于最大程度降低导通电阻,同时保持卓越的开关性能。

  • Primary Switch in insolated DC-DC
  • Synchronous Rectifier
  • Load Switch

  • 扩展额定 TJ 至 175°C
  • 最大值 rDS(on) = 1.65 mΩ(VGS = 10 V、ID = 32 A
  • 最大值 rDS(on) = 2.2 mΩ(VGS = 8 V, ID = 27 A
  • 低 rDS(on)和高效的先进硅封装
  • MSL1 耐用封装设计
  • 100% 经过 UIL 测试
  • 符合 RoHS 标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMS86550ET60

Active

CAD Model

Pb

A

H

P

PQFN-8

1

260

REEL

3000

Y

N-Channel

PowerTrench® T6

Power 56 (SO-8FL)

Low-Medium Voltage

Standard

0

Single

0

60

1.65

±20

4.5

245

187

-

-

-

90

8235

20

62

2140

70

$3.4318

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