MOSFETs | FDMT1D3N08B

N 沟道，双 CoolTM 88 PowerTrench® MOSFET，80V，164A，1.35mΩ

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概览

此 N 沟道 MOSFET 是使用先进的 PowerTrench® 工艺生产的。同时结合了硅和 Dual Cool™ 封装技术的发展，可提供最低的 rDS(on)，因为具有极低的结到环境热阻，同时可保持卓越的开关性能。

  • Oring FET / Load Switch
  • Synchronous Rectification
  • DC-DC Conversion
  • 最大值 rDS(on) = 0.56 mΩ（VGS = 10 V、ID = 64 A
    ）
  • 最大值 rDS(on) = 0.9 mΩ（VGS = 6 V、ID = 47 A
    ）
  • 先进的封装和硅技术完美融合，实现了低 rDS(on)和高效率
  • 下一代增强体二极管技术，设计用于软件恢复
  • 薄型 8x8mm MLP 封装
  • MSL1 强健封装设计
  • 100% 经过 UIL 测试
  • 符合 RoHS 标准

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMT1D3N08B

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Active

CAD Model

Pb

A

H

P

PQFN-8

483AQ

1

260

REEL

3000

Y

80

1.35

N-Channel

Single

±20

4

164

178

-

-

-

152

14000

$3.0255

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