Low/Medium Voltage MOSFETs | FDMT80060DC

N 沟道，双 CoolTM 88 PowerTrench® MOSFET，60V， 292A，1.1mΩ

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概览

此 N 沟道 MOSFET 使用先进的 PowerTrench® 工艺生产。同时结合了硅和 Dual Cool™ 封装技术的发展，可提供最低的 rDS(on)，因为具有极低的结到环境热阻，同时可保持卓越的开关性能。

  • Oring FET / Load Switch
  • Synchronous Rectification
  • DC-DC Conversion

  • 最大 rDS(on) = 1.1 mΩ（VGS = 10 V、ID = 43 A
    ）
  • 最大 rDS(on) = 1.3 mΩ（VGS = 8 V、ID = 37 A
    ）
  • 低 rDS(on)和高效的先进硅封装
  • 下一代先进体二极管技术，专为软恢复设计
  • 薄型 8x8mm MLP 封装
  • MSL1 强健封装设计
  • 100% 经过 UIL 测试
  • 符合 RoHS 标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMT80060DC

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CAD Model

Pb

A

H

P

DFNW-8

507AR

1

260

REEL

3000

Y

N-Channel

PowerTrench® T6

Power 88 Dual Cool

Low-Medium Voltage

Standard

0

Single

0

60

1.1

±20

4

292

156

-

-

-

137

14406

19

89

3222

87

$3.394

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可靠性数据

Die Related Summary Data

Device: FDMT80060DC

Equivalent to wafer fab process: RN

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

RN

9

5181260142

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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