Small Signal MOSFETs | FDN336P

双P沟道逻辑电平PowerTrench® MOSFET

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概览

此P沟道2.5V额定MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持低栅极电荷以获得卓越开关性能而定制的。 此类器件非常适合便携式电子应用： 负载开关和功率管理、电池充电电路和DC/DC转换。

  • This product is general usage and suitable for many different applications.
  • Load Switch
  • Power Management
  • DC/DC converter
  • Battery Charging Circuit

  • Portable Electronics

  • -1.3 A、-20 V。
  • RDS(ON) = 0.20Ω @ VGS= -4.5 V
  • RDS(ON) = 0.27 Ω @ VGS = -2.5 V
  • 低栅极电荷（3.6 nC，典型值）。
  • 高性能沟道技术可实现极低的RDS(ON)
  • SuperSOT™ -3提供低RDS(ON)，在相同尺寸下功率处理能力比SOT23高30%

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDN336P

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CAD Model

Pb

A

H

P

SOT-23-3

527AG

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

SOT-23

Small Signal

Logic

0

Single

0

-20

-

8

-1.5

-1.3

0.5

270

200

4.4

3.6

330

-

-

-

-

$0.1284

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可靠性数据

Die Related Summary Data

Device: FDN336P

Equivalent to wafer fab process: TR

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TR

1

1603286882

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Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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