MOSFETs | FDN357N

N 沟道，逻辑电平增强型场效应晶体管，30V，1.9A，90mΩ

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概览

SuperSOT™-3 N 沟道逻辑电平增强型电场效应晶体管是使用高单元密度的 DMOS 专属技术生产的。这种极高密度工艺特别适用于最大程度降低导通电阻。此类器件特别适用于笔记本电脑、手机、PCMCIA 卡和其他电池供电电路等低压应用，在此类应用中需要在非常小形的表面贴装封装中实现快速开关和线路内低功率损耗。

  • This product is general usage and suitable for many different applications.
  • Battery Powered Circuits
  • Notebook Computers
  • Portable Phones
  • PCMCIA cards
  • 1.9 A，30 V，RDS(ON) = 0.090 Ω @ VGS = 4.5 V，RDS(ON) = 0.060 Ω @ VGS = 10 V。
  • RDS(ON) = 0.090 Ω @ VGS = 4.5 V
  • RDS(ON) = 0.060 Ω @ VGS = 10 V
  • 工业标准外形SOT-23表面贴装封装采用专有的SuperSOT™-3设计，具有优异的热性能和电气性能。
  • 采用高密度单元设计，可实现极低的RDS(ON)。
  • 出色的导通阻抗和最大的DC电流能力。

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDN357N

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Active

CAD Model

Pb

A

H

P

SOT-23-3

527AG

1

260

REEL

3000

N

30

60

N-Channel

Single

20

2

1.9

0.5

-

90

5

4.2

235

$0.1519

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