MOSFETs | FDN358P

单 P 沟道，逻辑电平，PowerTrench® MOSFET，-30V，-1.5A，125mΩ

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概览

此 P 沟道逻辑电平 MOSFET 是使用先进的 PowerTrench 工艺生产的，特别适用于最大程度降低导通电阻，同时保持低门极电荷，实现卓越的开关性能。此类器件非常适用于便携式电子应用：负载开关和电源管理、电池充电电路和 DC/DC 转换。

  • This product is general usage and suitable for many different applications.
  • Load Switch
  • Power Management
  • Battery Charging Circuit
  • DC-DC Conversion
  • -1.5 A，-30 V
  • RDS(ON) = 125 mΩ @ VGS = 10 V
  • RDS(ON) = 200 mΩ @ VGS = 4.5 V
  • 低栅极电荷（4nC，典型值）
  • 高性能沟道技术可实现极低的RDS(ON)
  • 高功率版本的工业标准SOT-23封装。 相同的SOT-23引脚，可将功率处理能力提高30%。

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDN358P

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Active

CAD Model

Pb

A

H

P

SOT-23-3

527AG

1

260

REEL

3000

N

-30

125

P-Channel

Single

20

-3

-1.5

0.5

-

200

5

4

182

$0.1472

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