FDN5618P

60V，P 沟道，PowerTrench® MOSFET，-1.25A，170mΩ

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概览

此 60V P 沟道 MOSFET 使用高压 PowerTrench 工艺。此产品非常适用于电源管理应用。

应用

This product is general usage and suitable for many different applications.

特性

–1.25 A, –60 V. R_DS(ON) = 0.200Ω @ V_GS = –10 V, R_DS(ON) = 0.230Ω @ V_GS = –4.5 V
R_DS(ON) = 0.200Ω @ V_GS = –10 V
R_DS(ON) = 0.230Ω @ V_GS = –4.5 V
快速开关速度
高性能沟道技术可实现极低的R_DS(ON)。

物质成分

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDN5618P

Active

SOT-23-3

527AG

260

REEL

3000

-60

170

P-Channel

Single

±20

-3

-1.25

0.5

230

8.6

430

$0.1253

产品型号:

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MOSFETs | FDN5618P

60V，P 沟道，PowerTrench® MOSFET，-1.25A，170mΩ

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