60V,P 沟道,PowerTrench® MOSFET,-1.25A,170mΩ

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概览

此 60V P 沟道 MOSFET 使用高压 PowerTrench 工艺。此产品非常适用于电源管理应用。

  • This product is general usage and suitable for many different applications.

  • –1.25 A, –60 V. RDS(ON) = 0.200Ω @ VGS = –10 V, RDS(ON) = 0.230Ω @ VGS = –4.5 V
  • RDS(ON) = 0.200Ω @ VGS = –10 V
  • RDS(ON) = 0.230Ω @ VGS = –4.5 V
  • 快速开关速度
  • 高性能沟道技术可实现极低的RDS(ON)

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

Active

CAD Model

Pb

A

H

P

SOT-23-3

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

SOT-23

Small Signal

Logic

0

Single

0

-60

170

±20

-3

-1.25

0.5

-

230

-

8.6

430

1.3

-

52

19

$0.1253

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