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Small Signal MOSFETs | FDN5618P
概览
此 60V P 沟道 MOSFET 使用高压 PowerTrench 工艺。此产品非常适用于电源管理应用。
- This product is general usage and suitable for many different applications.
- –1.25 A, –60 V. RDS(ON) = 0.200Ω @ VGS = –10 V, RDS(ON) = 0.230Ω @ VGS = –4.5 V
- RDS(ON) = 0.200Ω @ VGS = –10 V
- RDS(ON) = 0.230Ω @ VGS = –4.5 V
- 快速开关速度
- 高性能沟道技术可实现极低的RDS(ON)。
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FDN5618P
Active
Pb
A
H
P
SOT-23-3
1
260
REEL
3000
N
P-Channel
PowerTrench® T1
SOT-23
Small Signal
Logic
0
Single
0
-60
170
±20
-3
-1.25
0.5
-
230
-
8.6
430
1.3
-
52
19
$0.1253
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