MOSFETs | FDP036N10A

N 沟道，PowerTrench® MOSFET，100V，214A，3.6mΩ

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概览

此 N 沟道 MOSFET 是使用先进的 PowerTrench® 工艺生产的，该工艺适用于最大程度降低导通电阻，同时保持卓越的开关性能。

  • AC-DC商用电源-服务器和工作站
  • AC-DC商用电源-台式计算机
  • 不间断电源
  • 电动自行车
  • Synchronous Rectification for ATX / Server / Telecom PSU
  • Battery Protection Circuit
  • Motor Drives
  • Uninterruptible Power Supplies
  • Micro Solar Inverters
  • RDS(on) = 3.2mΩ （典型值）@ VGS = 10V, ID = 75A
  • 快速开关速度
  • 低栅极电荷，QG = 89nC（典型值）
  • 高性能沟道技术可实现极低的 RDS(on)
  • 高功率和高电流处理能力
  • 符合 RoHS 标准

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDP036N10A

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Active

CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

800

Y

100

3.6

N-Channel

Single

±20

4

214

333

-

-

-

89

5485

$2.3012

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