MOSFETs | FDP2614

N 沟道，PowerTrench® MOSFET，200V，62A，27mΩ

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CAD Model

CAD模型

概览

此 N 沟道 MOSFET 是使用 PowerTrench® 工艺生产的，该工艺适用于最大程度降低导通电阻，同时保持卓越的开关性能。

  • 消费型设备
  • Synchronous Rectification
  • Battery Protection Circuit
  • Motor Drives
  • Uninterruptible Power Supplies
  • RDS(on) = 22.9mΩ （典型值）@ VGS = 10V, ID = 31A
  • 快速开关速度
  • 低栅极电荷
  • 高性能沟道技术可实现极低的RDS(on)
  • 高功率和高电流处理能力
  • 符合 RoHS 标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDP2614

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Active

CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

800

Y

200

27

N-Channel

Single

±30

5

62

260

-

-

-

76

5435

$2.3207

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