FDP3632

N 沟道，PowerTrench® MOSFET，100V，80A，9mΩ 推荐替代产品为 FDP090N10

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数据表

CAD模型

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特性

r_DS(ON) = 7.5m? (Typ.), V_GS = 10V, I_D = 80A
Q_g(tot) = 84nC (Typ.), V_GS = 10V
Low Miller Charge
Low Q_RR Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
RoHS Compliant

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDP3632

Active, Not Rec

TO-220-3

340AT

TUBE

800

100

N-Channel

Single

±20

310

6000

$1.7208

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MOSFETs | FDP3632

N 沟道，PowerTrench® MOSFET，100V，80A，9mΩ 推荐替代产品为 FDP090N10

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