MOSFETs | FDPC5018SG

30V，不对称双 N 沟道，PowerTrench® Power Clip MOSFET

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CAD Model

CAD模型

概览

此器件在一个双封装中包括了两个特制的 N 沟道 MOSFET。开关节点已经内部连接，可实现同步降压转换器的轻松布置和布线。控制 MOSFET (Q1) 和同步 SyncFET™ (Q2) 可提供最佳功率效率。

  • Computing
  • Communications
  • General Purpose Point of Load
  • Q1： N 沟道
  • 最大值 rDS(on) = 4.6 mΩ（VGS = 10 V, ID = 17 A
    ）
  • 最大值 rDS(on) = 6.5 mΩ（VGS = 4.5 V, ID = 14 A
    ）Q2： N 沟道
  • 最大值 rDS(on) = 1.6 mΩ（VGS = 10 V, ID = 32 A
    ）
  • 最大值 rDS(on) = 2.0 mΩ（VGS = 4.5 V, ID = 28 A
    ）

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDPC5018SG

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Active

CAD Model

Pb

A

H

P

PQFN-8

483AR

1

260

REEL

3000

Y

30

Q1: 5.0, Q2: 1.6

N-Channel

Dual

12

3

Q1= 56.0, Q2: 109.0

Q1: 23, Q2: 29

-

Q1: 6.5, Q2: 2.0

30

28

4593

$0.7748

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