Low/Medium Voltage MOSFETs | FDPC8013S

30 V 不对称双 N 沟道 PowerTrench® Power Clip MOSFET

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概览

此器件采用一个双封装，其中包含两个特制的 N 沟道 MOSFET。开关节点已经内部连接，可实现同步降压转换器的轻松布置和布线。控制 MOSFET (Q1) 和同步 SyncFET™ (Q2) 可提供最佳功率效率。

  • 配电
  • 其他有线通信
  • Computing
  • Communications
  • General Purpose Point of Load

  • Q1： N沟道
  • VGS = 4.5 V，ID = 10 A时，最大rDS(on) = 9.6mΩ
    Q2： N沟道
  • VGS = 4.5 V，ID = 22 A时，最大rDS(on) = 2.7mΩ
  • 低电感封装缩短了上升/下降时间，从而减少了开关损耗
  • MOSFET集成可实现降低电路电感以及开关节点振铃噪声的优化布局

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状态

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDPC8013S

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CAD Model

Pb

A

H

P

PQFN-8

483AZ

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

Power 33 (u8FL)

Low-Medium Voltage

Logic

0

Dual

0

30

Q1: 6.4, Q2: 1.9

20

3

Q1:13.0 Q2: 26.0

Q1: 1.6, Q2: 2.0

-

Q1: 9.6, Q2: 2.7

43

21

2785

-

-

-

-

$0.6587

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可靠性数据

Die Related Summary Data

Device: FDPC8013S

Equivalent to wafer fab process: RN,U4

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

RN,U4

0

79866999

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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