N 沟道 UniFETTM II MOSFET 600V, 17A, 340mΩ

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UniFETTM II MOSFET 是飞兆半导体的高压 MOSFET 系列产品,基于平面条形技术和 DMOS 技术。该先进MOSFET系列产品在平面 MOSFET 产品中具有最小的通态电阻,还可提供卓越的开关性能和更高的雪崩能量强度。此外,内部的栅源 ESD 二极管使 UniFET II MOSFET 产品可承受超过 2kV 的 HBM 冲击应力。该器件系列适用于开关电源转换器应用,如功率因数校正(PFC)、平板显示器(FPD)电视电源、ATX 及灯用电子镇流器。

  • This product is general usage and suitable for many different applications.
  • LCD / LED / PDP TV
  • Lighting
  • Uninterruptible Power Supplies
  • AC-DC Power Supplies

  • RDS(on) = 290mΩ (典型值)@ VGS = 10V, ID = 8.5A栅极电荷低(典型值:48nC)
  • 低 Crss(典型值23pF)
  • 100% 经过雪崩击穿测试
  • 提高了 dv/dt 性能
  • 符合 RoHS 标准
  • RoHS compliant

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDPF17N60NT

Active

CAD Model

Pb

A

H

P

TO-220-3 FullPak

NA

0

TUBE

1000

Y

N-Channel

PowerTrench® T1

TO-220FP

High Voltage

Standard

0

Single

0

600

340

±30

5

17

62.5

-

-

-

48

2285

20

7200

310

23

$1.3441

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