FDPF320N06L

N 沟道，逻辑电平，PowerTrench® MOSFET，60V，21A，25mΩ

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数据表

CAD模型

概览

此 N 沟道 MOSFET 是使用 PowerTrench® 工艺生产的，该工艺适用于最大程度降低导通电阻，同时保持卓越的开关性能。

应用

消费型设备
LED 电视

特性

R_DS(on) = 20mΩ （典型值）@ V_GS = 10V, I_D = 21A
R_DS(on) = 23mΩ（典型值）@ V_GS = 5V, I_D = 17A
低栅极电荷（典型值23.2nC)
Low C_rss（典型值）64pF)
快速开关
100%经过雪崩测试
提高了 dv/dt 性能
符合 RoHS 标准

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDPF320N06L

Active

TO-220-3 FullPak

221AT

TUBE

1000

N-Channel

Single

±20

2.5

12.7

1105

$0.8734

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MOSFETs | FDPF320N06L

N 沟道，逻辑电平，PowerTrench® MOSFET，60V，21A，25mΩ

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