MOSFETs | FDPF4D5N10C

N 沟道，屏蔽门极，PowerTrench® MOSFET，100V，128A，4.5mΩ

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概览

此 N 沟道 MV MOSFET 使用安森美半导体先进的 PowerTrench® 工艺生产，该工艺结合了屏蔽门极技术。此工艺经过了优化，可最大程度降低导通电阻，同时可保持卓越的开关性能，以及业内最佳的软体二极管。

  • Synchronous Rectification for ATX / Server / Workstation / Telecom PSU / Adapter and Industrial Power Supplies.
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • Server
  • Telecom
  • Computing ( ATX, Workstation, Adapter, Industrial Power Supplies etc. )
  • Motor Drive
  • Uninterruptible Power Supplies
  • Solar Inverter
  • Max RDS(on) = 4.5 mΩ at VGS = 10 V, ID = 128 A
  • High Performance Trench Technology for Extremely Low RDS(on)
  • Extremely Low Reverse Recovery Charge, Qrr
  • Low Gate Charge, QG = 48nC ( Typ.)
  • High Power and Current Handling Capability
  • 100% UIL Tested
  • RoHS Compliant

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDPF4D5N10C

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Active

CAD Model

Pb

A

H

P

TO-220-3 FullPak

221AT

NA

0

TUBE

1000

Y

100

4.5

N-Channel

Single

20

4

128

37.5

-

-

-

48

3615

$2.6054

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