MOSFETs | FDS2734

N 沟道，UItraFET Trench® MOSFET，250V，3.0A，117mΩ

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概览

此单 N 沟道 MOSFET 是使用先进的 UItraFET Trench® 工艺生产的，特别适用于最大程度降低导通电阻，同时保持卓越的开关性能。

  • This product is general usage and suitable for many different applications.
  • DC-DC Conversion
  • 最大 rDS(on) = 117 mΩ（VGS = 10 V、ID = 3.0 A
    ）
  • 最大 rDS(on) =126 mΩ（VGS = 6 V、ID = 2.8 A
    ）
  • 快速开关速度
  • 高性能沟道技术可实现极低的 rDS(on)
  • 高功率和高电流处理能力
  • 符合 RoHS 标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDS2734

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Active

CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

Y

250

117

N-Channel

Single

±30

4

3

2.5

-

-

-

32

1960

$0.8948

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