FDS5351

N 沟道，PowerTrench® MOSFET，60V，6.1A，35mΩ

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CAD模型

概览

此 N 沟道 MOSFET 是使用先进的 PowerTrench® 工艺生产的，特别适用于最大程度降低导通电阻，同时保持卓越的开关性能。

应用

This product is general usage and suitable for many different applications.
Inverter Switch
Synchronous Rectifier
Load Switch

特性

最大r_DS(on) = 35mΩ （V_GS = 10V, I_D = 6.1A）
最大r_DS(on) = 42mΩ （V_GS = 4.5V, I_D = 5.5A）
高性能沟道技术可实现极低的R_DS(on)
100%经过UIL测试
符合RoHS标准

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDS5351

Active

SOIC-8

751EB

260

REEL

2500

N-Channel

Single

±20

6.1

985

$0.2868

产品型号:

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MOSFETs | FDS5351

N 沟道，PowerTrench® MOSFET，60V，6.1A，35mΩ

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