MOSFETs | FDS6681Z

P 沟道，PowerTrench® MOSFET，30V，-20A，4.6mΩ

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概览

此 P 沟道 MOSFET 是使用先进的 PowerTrench® 工艺生产的，特别适用于最大程度降低导通电阻。此器件适用于笔记本电脑和便携式电池组中常见的电源管理和负载开关应用。

  • This product is general usage and suitable for many different applications.
  • • -20 A,-30V
  • RDS(ON) = 4.6 mΩ （VGS = -10V 时）
  • RDS(ON) = 6.5 mΩ （VGS = -4.5V 时）• 扩展了VGSS范围(-25V)，适合电池应用• HBM ESD保护等级，典型值为8KV（注3）• 高性能沟道技术可实现极低的RDS(ON)• 高功率和高电流处理能力• 终端无引线且符合RoHS标准
  • Extended VGSS range (–25V) for battery applications
  • HBM ESD protection level of 8kV typical (note 3)
  • High performance trench technology for extremely low RDS(ON)
  • High power and current handling capability
  • Termination is Lead-free and RoHS Compliant

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDS6681Z

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Active

CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

N

-30

4.6

P-Channel

Single

25

-3

-20

2.5

-

6.5

12

105

7540

$0.9418

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