FDS6690A

单 N 沟道，逻辑电平，Power Trench® MOSFET，30V，11A，12.5mΩ

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概览

此 N 沟道逻辑电平 MOSFET 是使用先进的 PowerTrench 工艺生产的，特别适用于最大程度降低导通电阻，同时保持卓越的开关性能。此类器件非常适用于要求线内低功率损耗和快速开关的低压和电池供电应用。

应用

This product is general usage and suitable for many different applications.

特性

11 A，30 V
R_DS(ON) = 12.5 mΩ @ V_GS = 10 V
R_DS(ON) = 17.0 mΩ @ V_GS = 4.5 V
快速开关速度
低栅极电荷
高性能沟道技术可实现极低的R_DS(on)
高功率和高电流处理能力

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDS6690A

Active

SOIC-8

751EB

260

REEL

2500

12.5

N-Channel

Single

2.5

1205

$0.2787

FDS6690A-NBNP006

Obsolete

SOIC-8

751EB

260

REEL

2500

12.5

N-Channel

Single

2.5

1205

Price N/A

产品型号:

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MOSFETs | FDS6690A

单 N 沟道，逻辑电平，Power Trench® MOSFET，30V，11A，12.5mΩ

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