FDS86240

N 沟道，PowerTrench® MOSFET，150V，7.5A，19.8mΩ

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概览

此 N 沟道 MOSFET 是使用先进的 Power Trench® 工艺生产的，针对 rDS(on)、开关性能和坚固性进行了优化。

应用

This product is general usage and suitable for many different applications.
DC/DC Converters
Off-line UPS
Distributed Power Architectures and VRMs
Primary Switch for 24V and 48V Systems
High Voltage Synchronous Rectifier

特性

最大r_DS(on) = 19.8 mO （V_GS = 10 V, I_D = 7.5 A）
V_GS = 6 V，I_D = 6.4 A时，最大r_DS(on) = 26 mΩ
高性能沟道技术可实现极低的R_DS(on)
在广泛使用的表面贴装封装中可实现高功率和高电流处理能力
100%经过UIL测试
符合RoHS标准

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDS86240

Active

SOIC-8

751EB

260

REEL

2500

150

19.8

N-Channel

Single

±20

7.5

1930

$1.1903

产品型号:

分销代理商		Stock	BUY

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MOSFETs | FDS86240

N 沟道，PowerTrench® MOSFET，150V，7.5A，19.8mΩ

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