MOSFETs | FDS86267P

P 沟道，屏蔽门极 PowerTrench® MOSFET，-150V，-2.2A，255mΩ

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概览

此 P 沟道 MOSFET 是使用先进的 PowerTrench® 工艺生产的，该工艺结合了屏蔽门极技术。此工艺经过了优化，可最大程度降低导通电阻，同时可保持卓越的开关性能。

  • Active Clamp Switch
  • Load Switch
  • 屏蔽栅极 MOSFET 技术
  • 最大 rDS(on) = 255 mΩ（VGS = -10 V、ID = -2.2 A
    ）
  • 最大 rDS(on) = 290 mΩ（VGS = -6 V、ID = -2 A
    ）
  • 中压 P 沟道硅技术的 rDS(on)极低，非常适用于 Qg 较低的情况
  • 本品已针对需要快速开关和负载开关的应用进行了优化
  • 100% 经过 UIL 测试
  • 符合RoHS标准

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDS86267P

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Active

CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

Y

-150

255

P-Channel

Single

±25

-4

-2.2

2.5

-

-

-

7

806

$0.5597

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