MOSFETs | FDS86540

N 沟道，PowerTrench® MOSFET，60V，18A，4.5mΩ

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概览

此 N 沟道 MOSFET 专用于提高 DC/DC 转换器的总能效以及最大程度降低其开关节点噪声，可以使用同步开关 PWM 控制器，也可以使用传统开关 PWM 控制器。它经过了优化，可实现低门极电荷、低 RDS(ON)、快速开关和体二极管逆向恢复功能。

  • 消费型设备
  • Primary Switch in Insolated DC-DC
  • Synchronous Rectifier
  • Load Switch
  • VGS = 10V，ID = 18A时，最大rDS(on) = 4.5mΩ
  • VGS = 8 V，ID = 16.5 A时，最大rDS(on) = 5.4mΩ
  • 高性能沟道技术可实现极低的rDS(on)
  • 高功率和高电流处理能力，采用广泛使用的表面贴装封装
  • 100%经过UIL测试
  • 符合RoHS标准

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDS86540

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Active

CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

Y

60

4.5

N-Channel

Single

±20

4

18

5

-

-

-

53

4820

$1.3659

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