MOSFETs | FDS9934C

互补，PowerTrench® MOSFET，20V

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CAD Model

CAD模型

概览

此类双 N 和 P 沟道增强型电场效应晶体管是使用先进的 PowerTrench® 工艺生产的，特别适合最大程度降低导通电阻，同时保持卓越的开关性能。此类器件适用于需要线内低功率损耗和快速开关的低压和电池供电应用。

  • This product is general usage and suitable for many different applications.
  • Q1： -6.5A、-20V
  • RDS(ON) = 43 mΩ @ VGS = 2.5 VQ2： -5A、-20V

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDS9934C

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Active

CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

N

±20

-

Complementary

Dual

12

Q1:1.5, Q2: -1.2

-5

2

N: 43, P: 90

N: 30, P: 55

-

8.7

955

$0.3351

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