MOSFETs | FDS9945

N 沟道，Power Trench® MOSFET，60V，3.5A，100mΩ

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概览

此类 N 沟道逻辑电平 MOSFET 专为提高 DC/DC 转换器的总效率而设计，可以使用同步开关 PWM 控制器，也可以使用传统开关 PWM 控制器。与具有相当的 RDS(ON) 规格的其他 MOSFET 相比，该 MOSFET 开关速度更快，门极电荷更低。因此该 MOSFET 驱动简单，也更安全（即使在非常高的频率下亦是如此），DC/DC 电源设计具有更高的总体效率。

  • This product is general usage and suitable for many different applications.
  • DC/DC Converters
  • 3.5 A, 60 V
  • RDS(ON) = 0.100Ω @ VGS = 10 V
  • RDS(ON) = 0.200Ω @ VGS = 4.5 V
  • 优化用于切换使用脉宽调制(PWM)控制器的DC/DC转换器
  • 极快速开关
  • 低栅极电荷

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDS9945

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Active

CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

Y

60

Q1=Q2=100

N-Channel

Dual

±20

3

3.5

2

-

Q1=Q2=200

-

8

420

$0.2297

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