FDS9958

-60V双P沟道PowerTrench® MOSFET

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CAD模型

概览

这些P沟道逻辑电平额定MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大程度地降低通态电阻并保持低栅极电荷以获得卓越开关性能而定制的。此类器件非常适合便携式电子应用：负载开关和电源管理、电池充电和保护电路。

应用

This product is general usage and suitable for many different applications.
Load Switch
Power Management

特性

V_GS = -10V，I_D = -2.9A时，最大r_DS(on) = 105 mΩ
最大r_DS(on) =135mΩ （V_GS = -4.5V, I_D = -2.5A）
符合RoHS标准

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDS9958

Active

SOIC-8

751EB

260

REEL

2500

-60

Q1=Q2=105

P-Channel

Dual

±20

-3

-2.9

Q1=Q2=135

765

$0.4048

产品型号:

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MOSFETs | FDS9958

-60V双P沟道PowerTrench® MOSFET

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