FDT1600N10ALZ

N 沟道，PowerTrench® MOSFET，100V，5.6A，160mΩ

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CAD模型

概览

此 N 沟道 MOSFET 使用先进的 PowerTrench® 工艺生产，该工艺适用于最大程度降低导通电阻，同时保持卓越的开关性能。

应用

LED 电视
消费型设备
Synchronous Rectification
Uninterruptible Power Supplies
Micro Solar Inverters

特性

R_DS(on) = 121 mΩ（典型值）@ V_GS = 10 V, I_D = 2.8 A
R_DS(on) = 156 mΩ (典型值)@ V_GS = 5 V, I_D = 1.8 A
快速开关速度
低栅极电荷（典型值2.9nC）
高性能沟道技术可实现极低的R_DS(on)
高功率和高电流处理能力
符合RoHS标准

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDT1600N10ALZ

Active

SOT-223-4 / TO-261-4

318H-01

260

REEL

4000

100

160

N-Channel

Single

±20

2.8

5.6

10.42

2.9

169

$0.2307

产品型号:

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MOSFETs | FDT1600N10ALZ

N 沟道，PowerTrench® MOSFET，100V，5.6A，160mΩ

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