MOSFETs | FDT86106LZ

N 沟道，PowerTrench® MOSFET，100V，3.2A，108mΩ

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概览

此 N 沟道逻辑电平 MOSFET 是使用先进的 PowerTrench® 工艺生产的，特别适用于最大程度降低导通电阻，同时保持卓越的开关性能。增加了 G-S 齐纳以提高 ESD 电压水平。

  • This product is general usage and suitable for many different applications.
  • DC-DC Conversion
  • VGS = 10 V，ID = 3.2 A时，最大rDS(on) = 108 mΩ
  • VGS = 4.5 V，ID = 2.7 A时，最大rDS(on) = 153 mΩ
  • 高性能沟道技术可实现极低的RDS(on)
  • 在广泛使用的表面贴装封装中可实现高功率和高电流处理能力
  • HBM静电放电保护等级为>3 KV，典型值（注4）
  • 100%经过UIL测试
  • 符合RoHS标准

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDT86106LZ

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Active

CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4

318H-01

1

260

REEL

4000

Y

100

108

N-Channel

Single

±20

2.2

3.2

2.2

-

153

-

2.4

234

$0.4692

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