MOSFETs | FDT86113LZ

N 沟道 Power Trench® MOSFET 100V，3.3A，100mΩ

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概览

此 N 沟道逻辑电平 MOSFET 是使用先进的 PowerTrench® 工艺生产的，特别适用于最大程度降低导通电阻，同时保持出色的开关性能。增加了 G-S 齐纳以提高 ESD 电压水平。

  • 消费型设备
  • DC-DC Switch
  • VGS = 10 V且ID = 3.3A时，最大rDS(on) = 100 mΩ
  • 在VGS = 4.5 V且ID = 2.7 A时，最大值rDS(on) = 145 mΩ
  • 高性能沟道技术可实现极低的RDS(on)
  • 在广泛使用的表面贴装封装中可实现高功率和高电流处理能力
  • HBM静电放电保护等级为>3 KV，典型值（注4）
  • 100%经过UIL测试
  • 符合RoHS标准

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDT86113LZ

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Active

CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4

318H-01

1

260

REEL

4000

Y

100

100

N-Channel

Single

±20

2.5

3.3

2.2

-

145

-

2.3

234

$0.3174

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