FDY102PZ

P 沟道 (-1.5V) 指定 PowerTrench® MOSFET -20V，-0.83A，0.5Ω

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数据表

CAD模型

概览

此单 P 沟道 MOSFET 是使用先进的 Power Trench 工艺设计的，可优化 rDS(on)@VGS = –1.5 V。

应用

This product is general usage and suitable for many different applications.

特性

V_GS = -4.5 V，I_D = -0.83 A时，最大r_DS(on) = 0.5Ω
V_GS = -2.5 V，I_D = -0.70 A时，最大r_DS(on) = 0.7Ω
V_GS = -1.8 V，I_D = -0.43 A时，最大r_DS(on) = 1.2Ω
V_GS = -1.5 V，I_D = -0.36 A时，最大r_DS(on) = 1.8Ω
HBM ESD保护等级 = 1400kV （注3）
符合RoHS标准

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDY102PZ

Active

SOT-523FL

419BG

260

REEL

3000

-20

P-Channel

Single

-1

-0.83

0.625

700

500

0.8

2.2

100

$0.076

产品型号:

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MOSFETs | FDY102PZ

P 沟道 (-1.5V) 指定 PowerTrench® MOSFET -20V，-0.83A，0.5Ω

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