FDY2000PZ

双 P 沟道，指定，PowerTrench® MOSFET，-20V，-0.35A，1.2Ω

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CAD模型

概览

此双 P 沟道 MOSFET 是使用先进的 Power Trench 工艺设计的，可优化 RDS(ON)@VGS = -2.5V。

应用

This product is general usage and suitable for many different applications.
Li-Ion Battery Pack

特性

-350 mA，-20 V
R_DS(ON) = 1.2 Ω @ V_GS = - 4.5 V
R_DS(ON) = 1.6 Ω @ V_GS = - 2.5 V
静电放电(ESD)保护二极管（注3）
符合RoHS标准

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDY2000PZ

Last Shipments

SOT-563

419BH

260

REEL

3000

-20

P-Channel

Dual

-1.5

-0.35

0.625

Q1=Q2=1600

Q1=Q2=1200

100

Price N/A

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MOSFETs | FDY2000PZ

双 P 沟道，指定，PowerTrench® MOSFET，-20V，-0.35A，1.2Ω

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