MOSFETs | FQA24N60

功率 MOSFET，N 沟道，QFET®，600V，23.5A，240 mΩ，TO-3P

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概览

此 N 沟道增强型功率 MOSFET 是使用平面条纹和 DMOS 专属技术生产的。此先进 MOSFET 技术特别适用于降低导通电阻，提供出色的开关性能以及高雪崩能量强度。此类器件适用于开关模式电源、有源功率因数校正 (PFC) 和电子灯镇流器。

  • AC-DC商用电源-服务器和工作站
  • 工作站
  • 服务器和大型机
  • 台式计算机
  • AC-DC商用电源-台式计算机
  • Switched Mode Power Supplies
  • Active Power Factor Correction (PFC)
  • Electronic Lamp Ballasts
  • 23.5A, 600V, RDS(on) = 240mΩ（最大值）@VGS = 10 V, ID = 11.8A栅极电荷低（典型值：110nC)
  • 低 Crss（典型值56pF)
  • 100% 经过雪崩击穿测试
  • 100% avalanche tested

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FQA24N60

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Active

CAD Model

Pb

A

H

P

TO-3P-3L

340BZ

NA

0

TUBE

450

Y

600

240

N-Channel

Single

±30

5

23.5

310

-

-

-

110

4200

$4.4155

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