MOSFETs | FQB12P20

功率 MOSFET，P 沟道，QFET®，-200 V，-11.5 A，470 mΩ，D2PAK

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概览

此 P 沟道增强型功率 MOSFET 是使用平面条纹和 DMOS 专属技术生产的。此先进 MOSFET 技术适用于降低导通电阻，提供卓越的开关性能以及高雪崩能量强度。此类器件适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。

  • 其他工业
  • -11.5 A、-200 V、RDS(on) = 470 mΩ（最大值），需 VGS = -10 V、ID = -5.75 A栅极电荷低（典型值：31nC)
  • 低 Crss（典型值30pF)
  • 100% 经过雪崩击穿测试
  • 符合 RoHS 标准
  • RoHS Compliant

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FQB12P20TM

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Active

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

245

REEL

800

Y

-200

470

P-Channel

Single

±30

-5

-11.5

120

-

-

-

31

920

$0.7568

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