P 沟道 QFET® MOSFET -100V,-22A,125mΩ

概览

此 P 沟道增强型功率 MOSFET 是使用平面条纹和 DMOS 专属技术生产的。此先进 MOSFET 技术特别适用于降低导通电阻,提供出色的开关性能以及高雪崩能量强度。此类器件适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。

  • 其他工业

  • -22A, -100V, RDS(on) =125mΩ(最大值)@VGS = -10 V, ID = -11A
  • 低栅极电荷(典型值 40nC)
  • 低 Crss(典型值160pF)
  • 100% 经过雪崩击穿测试
  • 175°C最大结温额定值"

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产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FQB22P10TM

Active

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

1

245

REEL

800

Y

P-Channel

PowerTrench® T1

D2PAK

Low-Medium Voltage

Standard

0

Single

0

-100

125

±30

-4

-22

125

-

-

-

40

1170

21

600

460

160

$0.8613

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