MOSFETs | FQB4N80

N 沟道 QFET® MOSFET 800V，3.9A，3.6Ω

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概览

此 N 沟道增强型功率 MOSFET 是使用平面条纹和 DMOS 专属技术生产的。此先进 MOSFET 技术特别适用于降低导通电阻，提供出色的开关性能以及高雪崩能量强度。此类器件适用于开关模式电源、有源功率因数校正 (PFC) 和电子灯镇流器。

  • 照明
  • 3.9A, 800V, RDS(on) = 3.6Ω（最大值）@VGS = 10 V, ID = 1.95A栅极电荷低（典型值：19nC)
  • 低 Crss（典型值8.6pF)
  • 100% 经过雪崩击穿测试
  • 符合 RoHS 标准
  • RoHS compliant

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FQB4N80TM

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Active

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

245

REEL

800

Y

800

3600

N-Channel

Single

±30

5

3.9

130

-

-

-

19

680

$0.9821

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