MOSFETs | FQB8N90CTM

N 沟道 QFET® MOSFET

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概览

这些 N 沟道增强型功率场效应晶体管采用飞兆专有的平面条形 DMOS 技术生产。这一先进技术是专为最大限度地降低导通电阻，提供卓越的开关性能，以及在雪崩击穿和换相情况下承受高能量脉冲而开发的。这些器件非常适合高效开关电源。

  • High Efficiency Switch Mode Power Supplies
  • 6.3 A，900 V，RDS(on) = 1.9 Ω（最大值），条件是 VGS = 10 V
  • 低栅极电荷（典型值35 nC)
  • 低Crss（典型值12 pF)
  • 快速开关
  • 100% 经过雪崩击穿测试
  • 提高了 dv/dt 性能

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FQB8N90CTM

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Active

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

245

REEL

800

N

900

1900

N-Channel

Single

5

5

6.3

171

-

-

-

35

1600

$1.2626

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