MOSFETs | FQD19N10L

功率 MOSFET，N 沟道，逻辑电平，QFET®，100 V，15.6 A，100 mΩ，DPAK

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概览

此 N 沟道增强型功率 MOSFET 是使用平面条纹和 DMOS 专属技术生产的。此先进 MOSFET 技术特别适用于降低导通电阻，提供出色的开关性能以及高雪崩能量强度。此类器件适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。

  • LCD 电视
  • PDP电视
  • LED 电视
  • 15.6A, 100V, RDS(on) = 100mΩ（最大值）@VGS = 10 V, ID = 7.8A栅极电荷低（典型值：14nC)
  • 低 Crss（典型值35pF)
  • 100% 经过雪崩击穿测试
  • 100% avalanche tested

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FQD19N10LTM

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Active

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

Y

100

100

N-Channel

Single

±20

2

15.6

50

-

-

-

14

670

$0.4068

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