MOSFETs | FQI7N60

N 沟道 QFET® MOSFET 600V，7.4A，1Ω

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概览

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。

  • 照明
  • 7.4A, 600V, RDS(on) = 1.0Ω(最大值）@VGS = 10 V, ID = 3.7A栅极电荷低（典型值：29nC)
  • 低 Crss（典型值16pF)
  • 100% 经过雪崩击穿测试
  • 符合 RoHS 标准
  • RoHS compliant

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FQI7N60TU

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Active

CAD Model

Pb

A

H

P

I2PAK-3 / D2PAK-3 STRAIGHT LEAD

418AV

NA

0

TUBE

1000

Y

600

1000

N-Channel

Single

±30

5

7.4

142

-

-

-

29

1100

$1.3245

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